Influence of electron irradiation on optical properties of ZnSe thin films

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Title	Influence of electron irradiation on optical properties of ZnSe thin films
Authors	Raghu, P. Naveen, C.S. Mrudula, K. Ganesh, S. Shailaja, J. Mahesh, H.M.
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Keywords	E – beam Evaporation Optical properties Electron radiation Thin films ZnSe
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/38420
Publisher	Sumy State University
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Citation	P. Raghu, C.S. Naveen, K. Mrudula, et al., J. Nano- Electron. Phys. 6 No 4, 04007 (2014)
Abstract	Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of optical energy at 550 nm wavelength. The samples irradiated  800 Gy tends to redeem the pristine properties. Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)