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Title | Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT |
Authors |
Das, Palash
Biswas, Dhrubes |
ORCID | |
Keywords |
AlGaN / GaN Modeling Threshold voltage Linearity |
Type | Article |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/39049 |
Publisher | Sumy State University |
License | |
Citation | Palash Das, Dhrubes Biswas, J. Nano- Electron. Phys. 7 No 1, 01006 (2015) |
Abstract |
In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted
based on the calculated energy levels inside triangular quantum well at the hetero-interface and found
to be comparable with experimental data. The conceptual explanation of device linearity in large signal
applications has been presented in terms of quantized energy levels in the quantum well. The dependence
of threshold voltage and linear operable gate voltage range on a newly introduced parameter named “Surface
Factor” is analyzed as well. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Das.pdf | 300,6 kB | Adobe PDF | 398982586 |
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