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Title Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors
Authors Murashev, V.N.
Konovalov, M.P.
Legotin, S.A.
Didenko, S.I.
Rabinovich, O.I.
Krasnov, A.A.
Kuzmina, K.A.
Keywords IGBT-transistors
Irradiation
Systems
Radioisotope
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/39054
Publisher Sumy State University
License
Citation V.N. Murashev, M.P. Konovalov, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 1, 01011 (2015)
Abstract The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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