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Title Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation
Authors Mani, Prashant
Pandey, Manoj Kumar
ORCID
Keywords SOI
Channel length
Threshold voltage
3D modeling
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/41375
Publisher Sumy State University
License
Citation Prashant Mani, Manoj Kumar Pandey, J. Nano- Electron. Phys. 7 No 2, 02002 (2015)
Abstract The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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China China
361438
Germany Germany
94882
India India
47443
Iran Iran
15
Lithuania Lithuania
1
South Korea South Korea
189767
Taiwan Taiwan
1
Ukraine Ukraine
1444409
United Kingdom United Kingdom
608
United States United States
9162044
Unknown Country Unknown Country
6
Vietnam Vietnam
1

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