Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/41375
Or use following links to share this resource in social networks: Recommend this item
Title Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation
Authors Mani, Prashant
Pandey, Manoj Kumar
Keywords SOI
Channel length
Threshold voltage
3D modeling
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/41375
Publisher Sumy State University
License
Citation Prashant Mani, Manoj Kumar Pandey, J. Nano- Electron. Phys. 7 No 2, 02002 (2015)
Abstract The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Algeria Algeria
1
Canada Canada
1
Finland Finland
1
France France
1
Germany Germany
4
Greece Greece
2280
India India
1
Italy Italy
1
Japan Japan
1
Lithuania Lithuania
1
Netherlands Netherlands
304
Taiwan Taiwan
1
Ukraine Ukraine
129
United Kingdom United Kingdom
609
United States United States
12467
Unknown Country Unknown Country
8
Vietnam Vietnam
2282

Downloads

China China
15
Germany Germany
2
India India
2
Iran Iran
15
Lithuania Lithuania
1
Taiwan Taiwan
1
Ukraine Ukraine
128
United Kingdom United Kingdom
608
United States United States
6842
Unknown Country Unknown Country
6
Vietnam Vietnam
1

Files

File Size Format Downloads
Mani.pdf 2,03 MB Adobe PDF 7621

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.