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Title Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity
Authors Murashev, V.N.
Yurchuk, S.Yu.
Legotin, S.A.
Yaromskiy, V.P.
Osipov, Yu.V.
Astahov, V.P.
El’nikov, D.S.
Didenko, S.I.
Rabinovich, O.I.
Kuz’mina, K.A.
Keywords Silicon p-i-n-photodiode characteristics simulation
Spectral sensitivity
Optimization design of photodetectors
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/41477
Publisher Sumy State University
License
Citation V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 2, 02023 (2015)
Abstract In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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