Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices

Lizunova, S.V.; Skakunova, O.S.; Olikhovskii, S.I.; Len, E.G.; Molodkin, V.B.; Klad’ko, V.P.; Kyslovs’kyy, Ye.M.; Sheludchenko, B.V.

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Title	Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices
Authors	Lizunova, S.V. Skakunova, O.S. Olikhovskii, S.I. Len, E.G. Molodkin, V.B. Klad’ko, V.P. Kyslovs’kyy, Ye.M. Sheludchenko, B.V.
ORCID
Keywords	quantum dots superlattice X-ray diffraction diffuse-dynamical diffractometry
Type	Conference Papers
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/42647
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Dynamical X-Ray Diffraction Characterization of the Self-Organized Quantum Dot Formation In Imperfect Semiconductor Superlattices [Текст] / O.S. Skakunova, S.V. Lizunova, S.I. Olikhovskii et al. // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01PCSI03.
Abstract	The self-organized quantum dot (QD) formation in InGaAs/GaAs superlattices grown by molecular beam epitaxy was investigated by the high-resolution X-ray diffraction technique. The investigated samples had the identical structure consisting of fifteen periods of {InxGa1−xAs (8 ML)/GaAs (26 ML)} with the nominal In concentration x = 0.2. The diffraction profiles and reciprocal lattice maps for these samples have been measured at symmetrical (004) reflection by using the triple-crystal X-ray diffractometer. The analysis of the measured data was performed by using the proposed diffraction model based on the statistical theory of dynamical X-ray scattering in imperfect single crystals and multilayer structures.
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