Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/42930
Or use following links to share this resource in social networks: Recommend this item
Title Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D
Authors Meriem, Boukais
Dennai, B.
Ould-Abbas, A.
Keywords SiGe
AMPS-1D
Emitter
Simulation
Conversion
Efficiency
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/42930
Publisher Sumy State University
License
Citation Boukais Meriem, B. Dennai, A. Ould-Abbas, J. Nano- Electron. Phys. 7 No 3, 03015 (2015)
Abstract The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper, we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure) developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications.
Appears in Collections: Наукові видання (ЕлІТ)

Views

Algeria Algeria
1
Canada Canada
1
France France
24
Germany Germany
4
Italy Italy
1
Myanmar Myanmar
1
Ukraine Ukraine
264
Unknown Country Unknown Country
10

Downloads

Algeria Algeria
3
China China
11
France France
1
Germany Germany
2
Maldives Maldives
1
Saudi Arabia Saudi Arabia
1
Serbia Serbia
1
Ukraine Ukraine
175
Unknown Country Unknown Country
1

Files

File Size Format Downloads
Meriem.pdf 321,09 kB Adobe PDF 196

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.