|Title||Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D|
|Date of Issue||2015|
|Publisher||Sumy State University|
|Citation||Boukais Meriem, B. Dennai, A. Ould-Abbas, J. Nano- Electron. Phys. 7 No 3, 03015 (2015)|
The thin-film SiGe is considered as promising candidate to meet the outstanding need for photovoltaic
applications with enhanced adsorption characteristics and improved conversion efficiency [1-6]. In this paper,
we simulated a solar cell type SiGe using AMPS1D (Analysis of Microelectronic and photonic structure)
developed at Pennsylvania State University, to analyze emitter layer (thickness, doping) and we
studied their influence on the photovoltaic solar cell. The simulation result shows that the maximum
efficiency of 16.181 % has been achieved, with short circuit current density of 32.657 mA/cm2, open circuit
voltage of 0.61 V and fill factor of 0.809. The obtained results show that the proposed design can be
considered as a potential candidate for high performance photovoltaic applications.
|Appears in Collections:||
Наукові видання (ЕлІТ)
|Meriem.pdf||321,09 kB||Adobe PDF||196|
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