Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/43178
Title: Effect of reaction time on structural properties of ZnO:Al films
Authors: Berestok, Taisiia Oleksandrivna
Opanasiuk, Anatolii Serhiiovych 
Kurbatov, Denys Ihorovych 
Cheong, H.
Suryavanshi, Priya
Trivedi, U.B.
Panchal, Ch.
Keywords: ZnO
ZnO:Al
структура
structure
суб-структури
суб-структуры
sub-structure
chemical bath deposition
Issue Year: 2015
Publisher: Proceedings of International Symposium on Semiconductor Materials and Devices
Citation: Effect of reaction time on structural properties of ZnO:Al films [ Текст ] / T.O. Berestok, A.S. Opanasyuk, D.I. Kurbatov et al. // Proceedings of International Symposium on Semiconductor Materials and Devices. - 2015. - ISSMD-3. - P. 2-5.
Abstract: Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a = 0.32486-0.32548 nm, c = 0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a = 0.32490-0.31997 nm, c = 0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L(100) = (24.5 - 27.3) nm, L(002) = (26.4 - 28.8) nm, L(101) = (25.0 - 27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L(100) = (19.5 - 52.3) nm, L(002) = (23.2 - 55.0) nm, L(101) = (17.6 - 48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L(100) = 38.0 nm, L(002) = 39.0 nm, L(101) = 39.4 nm) which was due to the peculiarities of ZnO:Al growth.
URI: http://essuir.sumdu.edu.ua/handle/123456789/43178
Type: Article
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