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Title Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers
Authors Fellaoui, K.
Abouelaoualim, D.
Elkadadra, A.
Oueriagli, A.
Keywords III-Nitride
AlGaN / GaN quantum wells (QWs)
Optical gain
Laser diodes
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/44473
Publisher Sumy State University
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Citation K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli, J. Nano- Electron. Phys. 7 No 4, 04061 (2015)
Abstract In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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