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Title Model of Band Diagram LED White Light in the System of GaN/InGaN
Authors Holovaty, Yu.P.
Kosushkin, V.G.
Khahaev, N.A.
Romanov, D.A.
Chervyakov, L.M.
Naimi, E.K.
Kozhitov, S.L.
Keywords Nitride indium-gallium (InGaN)
LED simulation
The band diagram
Semiconductors
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/44489
Publisher Sumy State University
License
Citation Yu.P. Holovaty, V.G. Kosushkin, N.A. Khahaev, et al., J. Nano- Electron. Phys. 7 No 4, 04069 (2015)
Abstract The results of the research of semiconductor multilayer nanostructures suitable for making white light LEDs in the GaN/InGaN with red, green and blue emission spectra formed in a single chip. The methodology and the calculation of the energy levels, the wave functions of the carriers, the electric fields caused by the spontaneous polarization and the piezoelectric effect, the spontaneous emission spectrum and chromaticity coordinates of the total radiation.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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