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Title | Model of Band Diagram LED White Light in the System of GaN/InGaN |
Authors |
Holovaty, Yu.P.
Kosushkin, V.G. Khahaev, N.A. Romanov, D.A. Chervyakov, L.M. Naimi, E.K. Kozhitov, S.L. |
ORCID | |
Keywords |
Nitride indium-gallium (InGaN) LED simulation The band diagram Semiconductors |
Type | Article |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/44489 |
Publisher | Sumy State University |
License | |
Citation | Yu.P. Holovaty, V.G. Kosushkin, N.A. Khahaev, et al., J. Nano- Electron. Phys. 7 No 4, 04069 (2015) |
Abstract |
The results of the research of semiconductor multilayer nanostructures suitable for making white light
LEDs in the GaN/InGaN with red, green and blue emission spectra formed in a single chip. The methodology
and the calculation of the energy levels, the wave functions of the carriers, the electric fields caused by
the spontaneous polarization and the piezoelectric effect, the spontaneous emission spectrum and chromaticity
coordinates of the total radiation. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Holovaty_Semiconductors.pdf | 415,16 kB | Adobe PDF | 13884710 |
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