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Title Initiation of Polarized State in the Tantalum Oxide Thin Films Grown by Magnetron Sputtering on a Substrate of Monocrystalline Silicon (100) Followed by Argon and Oxygen Ions
Authors Goncharov, I.Yu.
Kolesnikov, D.A.
Zykova, A.V.
Safonov, V.I.
Keywords Thin films of tantalum oxide
Magnetron sputtering
Kelvin probe microscopy
Polarization and depolarization
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/44542
Publisher Sumy State University
License
Citation I.Yu. Goncharov, D.A. Kolesnikov, A.V. Zykova, V.I. Safonov, J. Nano- Electron. Phys. 7 No 4, 04074 (2015)
Abstract The pictures of the induced state and the surface potential distribution in thin films of tantalum oxide produced by magnetron sputtering onto a substrate of monocrystalline silicon (100) followed by low energy argon and oxygen ions was investigated by atomic force microscopy in spreading resistance and scanning Kelvin probe microscopy mode. It was shown that it is possible to polarize or depolarize the coating, and then to visualize the state of the induced polarization using an electric field applied via the conductive cantilever in contact spreading resistance microscopy mode. It was found that treatment with argon ions increases the contrast of the of the surface potential distribution maps from 1.2 V to 2,3 V for negative – 10 V voltage on the probe and from 9,6 V to 19,2 V for a positive + 10 V voltage in comparison with the oxygen ions.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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