|Title||The Electron Scattering on Local Potential of Crystal Defects in GaSb Whiskers|
Charge carrier scattering
|Date of Issue||2015|
|Publisher||Sumy State University|
|Citation||A.A. Druzhinin, I.P. Ostrovskii, Yu.N. Khoverko, І.I. Khytruk, J. Nano- Electron. Phys. 7 No 4, 04084 (2015)|
The concentration and mobility of electrons were examined by Hall measurements in n-GaSb whiskers
with defect concentration of about 5 1017 cm – 3. The dependences of electron mobility and Hall factor on
temperature were calculated using the short-range scattering models in the temperature interval 4.2-
500 К. The electron interaction with different types of lattice defects was considered.
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|Druzhinin_ Charge_carrier_scattering.pdf||477,67 kB||Adobe PDF||1459|
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