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Title | Temperature Dependent IR-Drop Analysis in Graphene Nanoribbon Based Power Interconnect |
Authors |
Bhattacharya, S.
Das, D. Rahaman, H. |
ORCID | |
Keywords |
Graphene nanoribbon (GNR) Temperature Peak-IR-Drop Effective-MFP (mean free path) Interconnect |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/44796 |
Publisher | Sumy State University |
License | |
Citation | S. Bhattacharya, D. Das, H. Rahaman, J. Nano- Electron. Phys. 8 No 1, 01001 (2016) |
Abstract |
The paper proposes a temperature dependent resistive model of graphene nanoribbon (GNR) based power interconnects. Using the proposed model, IR-drop analysis for 16nm technology node latest by ITRS is performed. For a temperature range from 150 K to 450 K, the variation of resistance of GNR interconnect is ~ 2-5 × times lesser than that of traditional copper based power interconnects. Our analysis shows that GNR based power interconnects can show ~ 2-3 times reduction in Peak IR-drop as compared with copper based interconnects for local, intermediate and global interconnects. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Bhattacharya_Temperature.pdf | 418,63 kB | Adobe PDF | 237423006 |
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