Perspective Method of Betavoltaic Converter Creation

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Title	Perspective Method of Betavoltaic Converter Creation
Authors	Rudenko, K.V. Miakonkih, A.V. Rogojin, A.E. Bogdanov, S.V. Lelekov, E.T. Sidorov, V.G. Zelenkov, P.V.
ORCID
Keywords	Betavoltaic element p-i-n diode Plasma-immersion ion implantation Cryo process Scalloping
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/45503
Publisher	Sumy State University
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Citation	K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin, et al., J. Nano- Electron. Phys. 8 No 2, 02022 (2016)
Abstract	Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)