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Title | Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor |
Authors |
Rogachev, I.A.
Knyazkov, A.V. Meshkov, O.I. Kurochka, A.S. |
ORCID | |
Keywords |
Gallium nitride Ohmic contacts Encapsulation Gate AlGaN / GaN HEMT |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/45575 |
Publisher | Sumy State University |
License | |
Citation | I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016) |
Abstract |
Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Rogachev.pdf | 319,35 kB | Adobe PDF | 3989619 |
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