Peculiarities of the formation of multicomponent AlN-TiB2-TiSi2 composite ceramics coatings during heat treatment

Pohrebniak, Oleksandr Dmytrovych; Kravchenko, Yaroslav Olehovych; Dem’yanenko, A.A.; Beresnev, V.M.; Sobol, O.V.; Pshik, A.V.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/46103

Or use following links to share this resource in social networks: Recommend this item

Title	Peculiarities of the formation of multicomponent AlN-TiB2-TiSi2 composite ceramics coatings during heat treatment
Authors	Pohrebniak, Oleksandr Dmytrovych Kravchenko, Yaroslav Olehovych Dem’yanenko, A.A. Beresnev, V.M. Sobol, O.V. Pshik, A.V.
ORCID	http://orcid.org/0000-0002-9218-6492 http://orcid.org/0000-0003-0984-1298
Keywords	nanocomposite coating pulsed magnetron sputtering high temperature annealing phase and elemental composition amorphous-like structure nanohardness
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/46103
Publisher	Pleiades Publishing, Ltd.
License	Copyright not evaluated
Citation	Peculiarities of the formation of multicomponent AlN-TiB2-TiSi2 composite ceramics coatings during heat treatment [Текст] / A.D. Pogrebnyak, Yu.A. Kravchenko, A.A. Dem’yanenko [and etc.] // The Physics of Metals and Metallography. — 2015. — №116(6). — P. 576-585.
Abstract	Results of studies of the morphology, elemental and phase compositions of coatings prepared by pulsed magnetron sputtering of the AlN–TiB2–TiSi2 composite ceramic target have been reported. The used technology allows us to prepare a protective amorphouslike layer with ordering areas with sizes up to 1 nm. The heat treatment of samples at 900 and 1300°C leads to the depletion of the coating surface of boride phases and the formation of αAl2O3 and β]TiO2based protective films on the surface. The growth of crystallites of the nanostructured coating to 11–25 nm is observed. The annealing at 1300°C allows us to obtain the ther mally stable crystalline state of substance, the nanohardness of which is 11 GPa.
Appears in Collections:	Наукові видання (ЕлІТ)