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Title Plasmonic effects in tin disulfide nanostructured thin films obtained by the close-spaced vacuum sublimation
Authors Stetsenko, М.О.
Возний, Андрій Андрійович
Voznyi, Andrii Andriiovych
Kosiak, Volodymyr Volodymyrovych
Rudenko, S.P.
Maksimenko, L.S.
Serdega, B.K.
Opanasiuk, Anatolii Serhiiovych  
Keywords Сульфід олова
Сульфид олова
Tin disulfide
Наноструктуровані плівки
Наноструктурированные пленки
Nanostructured films
Поверхневий плазмонний резонанс
Поверхностный плазмонный резонанс
Surface plasmon resonance
Модульна поляризаційна спектроскопія
Модульная поляризационная спектроскопия
Modulation-polarization spectroscopy
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/46192
Publisher Springer
License
Citation Plasmonic effects in tin disulfide nanostructured thin films obtained by the close-spaced vacuum sublimation [Text] / M.O. Stetsenko, A.A. Voznyi, V.V. Kosyak [et al.] // Plasmonics. - 2016. - doi:10.1007/s11468-016-0378-z.
Abstract This work reports the investigation of plasmonic effects in tin disulfide (SnS2) nanostructured films obtained by the close-spaced vacuum sublimation method (CSS). Structural properties and phase composition of SnS2 films were studied with the help of field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Xray diffraction (XRD) and Raman spectroscopy. Surface morphology and optical polarization properties of SnS2 films deposited at different substrate temperature were investigated by modulation-polarization spectroscopy (MPS). Surface plasmon resonances (SPR) with localized and polariton types were observed by measuring of angular and spectral characteristics of polarization difference. Radiative and nonradiative modes of surface plasmons have been analyzed at different light incident angles. The influence of surface morphology on resonant parameters of different types of SPR was studied. Correlation between the experimental results and theoretical calculations was established. The refractive and absorption indexes were found for the SnS2 films at different substrate temperature.
Appears in Collections: Наукові видання (ЕлІТ)

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