Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/47285
Or use following links to share this resource in social networks: Recommend this item
Title Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
Authors Matveev, D.Yu.
ORCID
Keywords thin films
bismuth
tellurium
mobility
size effect
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/47285
Publisher Sumy State University
License
Citation Matveev, D.Yu. Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium [Текст] / D.Yu. Matveev // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03012
Abstract The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Canada Canada
2
China China
74695751
France France
1425
Germany Germany
3994847
Greece Greece
37362
Ireland Ireland
763046
Italy Italy
1
Lithuania Lithuania
1
Singapore Singapore
1
Sweden Sweden
1
Ukraine Ukraine
432958156
United Kingdom United Kingdom
12455878
United States United States
291174828
Unknown Country Unknown Country
24898826
Vietnam Vietnam
37360

Downloads

China China
149391502
France France
841017486
Germany Germany
149391500
Indonesia Indonesia
1
Ireland Ireland
1
Lithuania Lithuania
1
Netherlands Netherlands
1
Singapore Singapore
1
Switzerland Switzerland
1
Ukraine Ukraine
74695751
United Kingdom United Kingdom
1
United States United States
432958157
Unknown Country Unknown Country
53
Vietnam Vietnam
1

Files

File Size Format Downloads
Matveev_ thin_films.pdf 451 kB Adobe PDF 1647454457

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.