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Title Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application
Authors Lazarenko, P.I.
Sherchenkov, A.A.
Kozyukhin, S.A.
Terekhov, D.Y.
Yakubov, A.O.
Babich, A.V.
Shuliatyev, A.S.
Sagunova, I.V.
Redichev, E.N.
ORCID
Keywords phase change memory
Ge-Sb-Te
quasi-binary line GeTe-Sb[2]Te[3]
seebeck coefficient
electrophysical properties
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/47493
Publisher Sumy State University
License
Citation Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application [Текст] / P.I. Lazarenko, A.A. Sherchenkov, S.A. Kozyukhin [et al.] // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03033
Abstract Influence of the composition variation along the quasi-binary line GeTe-Sb[2]Te[3] on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb[2]Te[3] from GeSb[4]Te[7] to GeSb[2]Te[4], and then to Ge[2]Sb[2]Te[5], while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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