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Title | Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x |
Authors |
Altukhov, V.I.
Bilalov, B.A. Sankin, A.V. Filipova, S.V. |
ORCID | |
Keywords |
Schottky barrier Silicon carbide Solid solutions Volt-amper characteristics Metalsemiconductor transitions |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/48770 |
Publisher | Sumy State University |
License | |
Citation | V.I. Altukhov, B.A. Bilalov, A.V. Sankin, S.V. Filipova, J. Nano- Electron. Phys. 8 No 4(1), 04003 (2016) |
Abstract |
Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that
taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher
barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with
experiment. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Files
File | Size | Format | Downloads |
---|---|---|---|
Altukhov_Bilalov_Sankin_Filipova.pdf | 463,1 kB | Adobe PDF | 211395998 |
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