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Title | Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator |
Authors |
Bella, M.
Latreche, S. Gontrand, C. |
ORCID | |
Keywords |
DGMOS transistor Radio-frequency Mixed-mode simulation Phase noise ISF funcfion |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/49087 |
Publisher | Sumy State University |
License | |
Citation | M. Bella, S. Latreche, C. Gontrand, J. Nano- Electron. Phys. 8 No 4(1), 04022 (2016) |
Abstract |
This paper present a comprehensive analysis of LC Colpitts Oscillator built around a DGMOS (Double
Gate Metal Oxide Semiconductor) transistor using high-k technology. A mixed- mode simulation is involved,
applying a quantum model to the device whereas the rest of the considered circuit is governed by
Kirchhoff‟s laws. The quantum device model correspond to 2D numerical calculations based on self- consistent
codes coupling Poisson and Schrödinger equation along the transport direction, considering an effective
mass approximation. A comparison with Drift Diffusion model (DDM) is made in order to point out
importance of quantum effect in this nanometer device. The impact of high-k oxide gate is investigated and
analyzed; the results confirm that the high-k is an interesting alternative to reduce tunneling gate current
of the DGMOS transistor but reach the same drain one. Considering the oscillator, our goal is focused on
the analysis of its phase noise.
The Linear Time Variant (LTV) model of phase noise is considered. It is based on the Impulse Sensitivity
Function (ISF) which describes carefully the sensitivity of an oscillator to a parasite impulse current
injection in different nodes of the circuit. The obtained results pointed out that the ISF function is sinusoidal
and its period is nearly the same of the oscillator output signal for different dielectric oxide. It also
states that the phase noise of a Colpitts oscillator is not affected by the use of the high-k materials. Finally
this method, if extended, is a good tool to investigate a perturbation response on such circuits. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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