Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/49697
Or use following links to share this resource in social networks: Recommend this item
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Rahou, F.Z.
Bouazza, A.G.
Bouazza, B.
Keywords Technology SOI
Short-channel effects (SCEs)
Multi-gate SOI MOSFET
SOI TRI-GATE FinFET
High-k dielectric
Silvaco Software
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/49697
Publisher Sumy State University
License
Citation Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016)
Abstract The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Algeria Algeria
2
Canada Canada
1
China China
1
France France
1
Germany Germany
1
Iran Iran
1
Lithuania Lithuania
1
Ukraine Ukraine
1062
United Kingdom United Kingdom
6831
United States United States
10248
Unknown Country Unknown Country
48

Downloads

China China
2
Germany Germany
3
Malaysia Malaysia
1
Ukraine Ukraine
1065
United Kingdom United Kingdom
1
United States United States
10247
Unknown Country Unknown Country
60

Files

File Size Format Downloads
Rahou_Bouazza_Bouazza.pdf 707,13 kB Adobe PDF 11379

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.