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Title | Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor |
Authors |
Rahou, F.Z.
Bouazza, A.G. Bouazza, B. |
ORCID | |
Keywords |
Technology SOI Short-channel effects (SCEs) Multi-gate SOI MOSFET SOI TRI-GATE FinFET High-k dielectric Silvaco Software |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/49697 |
Publisher | Sumy State University |
License | |
Citation | Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016) |
Abstract |
The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Rahou_Bouazza_Bouazza.pdf | 707,13 kB | Adobe PDF | 335731321 |
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