Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor

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Title	Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors	Rahou, F.Z. Bouazza, A.G. Bouazza, B.
ORCID
Keywords	Technology SOI Short-channel effects (SCEs) Multi-gate SOI MOSFET SOI TRI-GATE FinFET High-k dielectric Silvaco Software
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49697
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016)
Abstract	The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)