Boron Monolayer χ3-type. Formation of the Vacancy Defect and Pinhole

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Title	Boron Monolayer χ3-type. Formation of the Vacancy Defect and Pinhole
Authors	Boroznina, E.V. Davletova, O.A. Zaporotskova, I.V.
ORCID
Keywords	Boron monolayer Pinhole Vacancy formation Theoretical research
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49843
Publisher	Sumy State University
License	Copyright not evaluated
Citation	E.V. Boroznina, O.A. Davletova, I.V. Zaporotskova, J. Nano- Electron. Phys. 8 No 4(2), 04054 (2016)
Abstract	This research is focused on a local vacancy defect formation and pinholes formation in a two-dimensional boron structure – boron monolayer χ3 - type. The main characteristics of defects formation have been carried out by using the semi-empirical quantum-chemical scheme MNDO. The variants of atomic configurations which give pinholes defect have been found.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)