Boron Monolayer χ3-type. Formation of the Vacancy Defect and Pinhole

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/49843

Or use following links to share this resource in social networks: Recommend this item

Title	Boron Monolayer χ3-type. Formation of the Vacancy Defect and Pinhole
Authors	Boroznina, E.V. Davletova, O.A. Zaporotskova, I.V.
Keywords	Boron monolayer Pinhole Vacancy formation Theoretical research
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49843
Publisher	Sumy State University
License
Citation	E.V. Boroznina, O.A. Davletova, I.V. Zaporotskova, J. Nano- Electron. Phys. 8 No 4(2), 04054 (2016)
Abstract	This research is focused on a local vacancy defect formation and pinholes formation in a two-dimensional boron structure – boron monolayer χ3 - type. The main characteristics of defects formation have been carried out by using the semi-empirical quantum-chemical scheme MNDO. The variants of atomic configurations which give pinholes defect have been found.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)