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Title | Effect of Bias Voltage and Nitrogen Pressure on the Structure and Properties of Vacuum-Arc (Mo + Ti6%Si)N Coatings |
Authors |
Beresnev, V.M.
Sobol, O.V. Litovchenko, S.V. Pohrebniak, Oleksandr Dmytrovych Srebnyuk, P.A. Novikov, V.Yu. Kolesnisov, D.A. Meilekhov, A.A. Postel’nik, A.A. Nemchenko, U.S. |
ORCID |
http://orcid.org/0000-0002-9218-6492 |
Keywords |
vacuum-arc multilayer coatings growth morphology microhardness |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/64238 |
Publisher | Pleiades Publishing, Ltd |
License | |
Citation | Effect of Bias Voltage and Nitrogen Pressure on the Structure and Properties of Vacuum-Arc (Mo + Ti6%Si)N Coatings [Text] / V.M. Beresnev, O.V. Sobol’, S.V. Litovchenko [et al.] // Technical Physics. — 2017. — №62(5). — P. 795-798. |
Abstract |
Effect of deposition conditions in reactive nitrogen atmosphere on the growth morphology, phase
composition, structure, and mechanical characteristics (microhardness) of vacuum-arc multilayer coatings
obtained using evaporation of the (Ti6%Si) and Mo cathodes is studied with the aid of raster electron micros-
copy, energy-dispersive elemental microanalysis, and microindentation. It is demonstrated that nitrogen
atoms are redistributed to the region of the strongest nitride-forming element (Ti) in relatively thin layers
(about 7 nm) consisting of substances with substantially different heats of formation (−336 kJ/mol for TiN
and −34 kJ/mol for MoN). Such a process leads to lamination with the formation of nitride TiN and metal
Mo (weaker nitride-forming element). Nitrogen–metal bonds are saturated in the layers of strong nitride-
forming elements Ti(Si) when the nitrogen pressure increases from 6 × 10–4 to 5 × 10–3 Torr in the conden-
sation procedure. Thus, the compound is filled with nitrogen to the stoichiometric composition and, then,
the second system of layers based on molybdenum is saturated with nitrogen with the formation of the γ-
Mo2N phase. An increase in bias potential USP from –100 to –200 V stimulates mixing in thin layers with the
formation of the (Ti, Si, Mo)N solid solution and leads to a decrease in microhardness from 37 to 32 GPa. |
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