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Title Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
Authors Sachdeva, Nitin
Vashishath, Munish
Bansal, P.K.
ORCID
Keywords MOSFET
SS
Threshold voltage
SCEs
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65992
Publisher Sumy State University
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Citation Sachdeva, N. Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs [Текст] / N. Sachdeva, M. Vashishath, P.K. Bansal // Журнал нано- та електронної фізики. – 2017. – Т.9, № 6. – 06009. – DOI: 10.21272/jnep.9(6).06009.
Abstract Prior to the fabrication of Integrated circuits, the electrical parameters are analytically modeled & simulated using any computer aided design tool. The ever increasing demand of the features of the electronic appliances has forced to put more and more transistors in a small IC chip. The main target of the integrated circuit design and fabrication is to achieve more functionality at higher speed using less power, less area and low cost. Various parameters like threshold voltage, sub-threshold leakage current and subthreshold slope etc. are analytically derived and simulated to get match with each other. In this paper, 45 nm n-channel metal-oxide- semiconductor field effect transistor (NMOS) has been designed in SILVACO tool to give low off state leakage current by increasing the work function of gate.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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