Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/66047
Or use following links to share this resource in social networks: Recommend this item
Title Effect of Annealing Time on the Power Conversion Efficiency of Silicon Nanowire Based Solar Cell Prepared by Wet Diffusion Technique
Authors Trinh, P.V.
Thang, B.H.
Chuc, N.V.
Hong, P.N.
Minh, P.N.
Keywords Si nanowires
Solar cell
Power conversion efficiency
Wet diffusion
Annealing time
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/66047
Publisher Sumy State University
License
Citation Effect of Annealing Time on the Power Conversion Efficiency of Silicon Nanowire Based Solar Cell Prepared by Wet Diffusion Technique [Текст] / P.V. Trinh, B.H. Thang, N.V. Chuc [et al.] // Журнал нано- та електронної фізики. – 2017. – Т.9, № 6. – 06025. – DOI: 10.21272/jnep.9(6).06025.
Abstract In this study, we present the effect of annealing time on the power conversion efficiency (PCE) of silicon nanowire (SiNW) based solar cell prepared by wet diffusion technique. P-typed SiNW arrays were prepared by metal assisted chemical etching (MACE) method using aqueous solution including HF (4.6 M) and AgNO3 (0.02 M). The prepared SiNWs have V-shaped structures with the wall thickness in a range from 10-50 nm and the average length of 1.5 μm. The reflectance of SiNW array remained less than 20 % and lower compared to that of planar Si (38 %) in the range of 300-1000 nm due to the subwavelength light trapping and collective light scattering interactions. The wet diffusion technique was used to making p-n junctions in solar cell structure with different annealing time at 850 ℃. The obtained results demonstrated that the PCE increases when increasing the annealing time from 30 min to 45 min then decreases with 60 min. The highest PCE obtained with cell annealed for 45 min was measured to be 2.2 % and about 2 times and 5 times higher compared to cell annealed for 60 min and 30 min, respectively. The dependence of PCE on the annealing time is attributed to the difference in the doping diffusion depth.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

France France
1
Germany Germany
1
Lithuania Lithuania
1
Ukraine Ukraine
146
United Kingdom United Kingdom
334
United States United States
167
Unknown Country Unknown Country
16
Vietnam Vietnam
671

Downloads

China China
1
Germany Germany
1
India India
1
Lithuania Lithuania
1
Ukraine Ukraine
145
United Kingdom United Kingdom
1
United States United States
332
Unknown Country Unknown Country
6
Vietnam Vietnam
672

Files

File Size Format Downloads
JNEP_06025_4.pdf 410,57 kB Adobe PDF 1160

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.