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Title Implantation of Ta Ions Into a Copper Single Crystal (100) And (111)
Authors Shablia, Vasyl Trokhymovych
Kshnyakin, V.S.
Kul`ment`eva, O.P.
Bondarenko, V.V.
Gritsenko, B.P.
Pohrebniak, Oleksandr Dmytrovych  
Keywords implantaciya of ta ions
имплантация ионов
імплантація іонів
Type Article
Date of Issue 2005
URI http://essuir.sumdu.edu.ua/handle/123456789/684
Publisher Publisher SSU
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Citation Implantation of Ta Ions Into a Copper Single Crystal (100) And (111) [Текст] / A.D. Pogrebnjak, V.T. Shablya, V.S. Kshnyakin [et al.] // Вісник Сумського державного університету. Серія Фізика, математика, механіка. — 2005. — № 8(80). — C. 118-124.
Abstract High-dose implantation (up to 1017 cm-2) of tantalum ions into a copper single crystal has been investigated. Irradiation of the copper crystals was performed in two different planes: (100) and (111). The maximum concentration of the tantalum atoms 5 at. % was observed for sample Cu (100). The Ta concentration in the Cu (111) surface after irradiation was only 1 at.%. Tantalum implantation was accompanied by surface carbonization and oxidation. Carbon and oxygen atoms were presented in the residual atmosphere of vacuum camber. The concentration of carbon and oxygen atoms on the surface reached 50 at. %. The microhardness of irradiated samples was ~ 30% higher than for untreated one. Also corrosion resistance enhancement was observed for implanted crystal. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/684
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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