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Title: Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications
Authors: Rupali, Kulkarni
Amit, Pawbake
Ravindra, Waykar
Ashok, Jadhawar
Haribhau, Borate
Rahul, Aher
Ajinkya, Bhorde
Shruthi, Nair
Priyanka, Sharma
Sandesh, Jadkar
Keywords: CdS films
RF magnetron sputtering
Low angle XRD
Raman spectroscopy
EDX spectroscopy
Issue Year: 2018
Publisher: Sumy State University
Citation: Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications [Текст] / K. Rupali, P. Amit, W. Ravindra [et al.] // Журнал нано- та електронної фізики. - 2018. - Т.10, № 3. - 03005. - DOI: 10.21272/jnep.10(3).03005.
Abstract: Single crystal thin films of CdS were grown onto glass substrates by RF magnetron sputtering at var ious substrate temperatures. Structural, optical and morphology properties of these films were investigated through low angle XRD, Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive x-ray (EDX) spectroscopy, UV-Visible spectroscopy etc. Formation of single crystal CdS films has been confirmed by low angle XRD and Raman spectroscopy analysis. Low angle XRD showed that CdS films has preferred orientation in (111) direction. Improvement of crystallinity and increase in average grain size of CdS crystallites has been observed with increase in substrate temperature. Surface morphology investigated using SEM showed that CdS films deposited over entire range of substrate temperature are highly smooth, dense, homogeneous, and free of flaws and cracks. The EDX data revealed the formation of high-quality nearly stoichiometric CdS films by RF magnetron sputtering. Furthermore, the CdS films deposited at low substrate temperatures (< 200 0C) are slightly S rich while deposited at higher substrate temperatures (> 200 0C) are slightly Cd rich. The UV-Visible spectroscopy analysis showed that an average transmission ~ 80-90 % in the visible range of the spectrum having band gap ~ 2.28 -2.38 eV, which is quite close to the optimum value of band gap for a buffer layer in CdTe/CdS, Cu2S/CdS hetero-junction solar cells.
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)


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