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Title A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors Djerioui, M.
Hebali, M.
Chalabi, D.
Saidane, A.
ORCID
Keywords Symmetrical DG SOI MOSFET
Poisson’s equation
Electrostatic potential
Numerical method
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/71363
Publisher Sumy State University
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Citation A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs / M. Djerioui, M. Hebali, D. Chalabi, A. Saidane // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04027. - DOI: 10.21272/jnep.10(4).04027
Abstract To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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