Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/71478
Or use following links to share this resource in social networks: Recommend this item
Title Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells
Authors Djaaffar, Rached
Habib, Madani Yssaad
Wassila, Leila Rahal
Keywords HIT solar cells
potential barrier
band bending
current-voltage J(V) characteristics
amorphous silicon
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/71478
Publisher Sumy State University
License
Citation Djaaffar, Rached Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells / R. Djaaffar, M.Y. Habib, L.R. Wassila // Журнал нано- та електронної фізики. - 2018. - Т.10, № 5. - 05012. - DOI: 10.21272/jnep.10(5).05012
Abstract Among the factors limiting the open circuit voltage of Heterojunctions with Intrinsic Thin layers solar cell, the surface potential barrier at the Indium Tin Oxide (ITO)/hydrogenated amorphous silicon (a-Si:H) interface is one of the most important. To reduce this surface potential barrier, we have varied the band bending by simulation. The aim is to understand why, in spite of a considerable change in the front contact barrier height at the interface ITO/n-а-Si:H (band banding reduced), the characteristics J(V) remain almost unchanged.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

China China
1665
Greece Greece
2502
Lithuania Lithuania
1
Ukraine Ukraine
189
United Kingdom United Kingdom
417
United States United States
7501
Unknown Country Unknown Country
17
Vietnam Vietnam
2500

Downloads

China China
1
Lithuania Lithuania
1
Ukraine Ukraine
172
United Kingdom United Kingdom
1
United States United States
7500
Unknown Country Unknown Country
8
Vietnam Vietnam
1

Files

File Size Format Downloads
Djaaffar Rached_Computer_05012.pdf 369,82 kB Adobe PDF 7684

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.