Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells

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Title	Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells
Authors	Djaaffar, Rached Habib, Madani Yssaad Wassila, Leila Rahal
ORCID
Keywords	HIT solar cells potential barrier band bending current-voltage J(V) characteristics amorphous silicon
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/71478
Publisher	Sumy State University
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Citation	Djaaffar, Rached Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells / R. Djaaffar, M.Y. Habib, L.R. Wassila // Журнал нано- та електронної фізики. - 2018. - Т.10, № 5. - 05012. - DOI: 10.21272/jnep.10(5).05012
Abstract	Among the factors limiting the open circuit voltage of Heterojunctions with Intrinsic Thin layers solar cell, the surface potential barrier at the Indium Tin Oxide (ITO)/hydrogenated amorphous silicon (a-Si:H) interface is one of the most important. To reduce this surface potential barrier, we have varied the band bending by simulation. The aim is to understand why, in spite of a considerable change in the front contact barrier height at the interface ITO/n-а-Si:H (band banding reduced), the characteristics J(V) remain almost unchanged.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)