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Title Charge Based Quantization Model for Triple-Gate FINFETS
Authors Vimala, P.
ORCID
Keywords Analytical Model
Tri-Gate MOSFET
Poisson’s equation
Drain current model
Transconductance
C-V curve
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/71483
Publisher Sumy State University
License
Citation Vimala, P. Charge Based Quantization Model for Triple-Gate FINFETS / P. Vimala // Журнал нано- та електронної фізики. - 2018. - Т.10, № 5. - 05015. - DOI: 10.21272/jnep.10(5).05015
Abstract In this article we have developed an analytical model for Tri gate Metal oxide semiconductor field effect transistor (MOSFET) by including quantum effects. The coupled Schrödinger and Poisson’s equation is solved using variational approach to develop an analytical quantum model. An analytical model for charge centroid is obtained and then inversion charge model is developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. The compact model is shown to reproduce transfer characteristics, transconductance and C-V curve of tri gate MOSFET using the model. The modeled results are then compared to the simulated results. The comparison shows the accuracy of the proposed model.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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