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Title: Electronics Properties of Monoclinic HfO2
Authors: Abdelkrim, Mostefai
Smail, Berrah
Hamza, Abid
Keywords: SiO2
aproximation LDA
approximation GGA
pseudo-potential (PP)
atomic orbitals (AO)
slater type orbitals (STO)
Issue Year: 2018
Publisher: Sumy State University
Citation: Abdelkrim, Mostefai Electronics Properties of Monoclinic HfO[2] / M. Abdelkrim, B. Smail, A. Hamza // Журнал нано- та електронної фізики. - 2018. - Т.10, № 6. - 06026. - DOI: 10.21272/jnep.10(6).06026
Abstract: Density functional theory (DFT) is a very successful technique to calculating the properties of manyelectron systems from first principles. The bands structures, charge density and density of state (DOS) of monoclinic HfO2 are calculated using Pseudo potential (PP) and Atomic Orbitals (AO) method, within the density functional theory DFT, generalized gradient approximation GGA and local density approximation LDA. Hafnium oxide (HfO2) is a high-k dielectric (dielectric constant k ~ 25 at 300 K, band gap Eg ≈ 6 eV); thermally stable up to 700 ◦C. HfO2 is used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)


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