|Title||Nano-Scale Patterning Of Silicon Nanoparticles On Silicon Substrate By Dip-Pen-Nanolithography|
|Date of Issue||2011|
|Publisher||Sumy State University Publishing|
|Citation||A. Kumar, P.B. Agarwal, S. Sharma, D. Kumar, J. Nano- Electron. Phys. 3 No1, 127 (2011)|
Dip-Pen Nanolithography technique has been used to write nano-scale patterns of silicon nanoparticles on Si/SiO2 substrate using commercially available silicon nanoparticles suspension as ink (mean diameter 30 nm). Patterning experiments have been carried out under varying process conditions namely, temperature and humidity with varying writing speed. Linewidth of 92 nm has been measured at writing speed of 0.1 μm/sec, which reduced to 54 nm at higher speed of 1.6 μm/sec. Obtained results would be useful for patterning nano-size features of other hard materials (semiconductors and metals) for applications in nanoelectronics and biotechnology.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9522
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|15_nano.PDF||454,5 kB||Adobe PDF||2242|
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