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Showing results 1 to 6 of 6
Issue Year Title Author(s) Type Views Downloads
2011 Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range Padha, N.; Sachdeva, R.; Sihotra, R.; Krupanidhi, S.B. Article 1755482641 1579826274
2019 Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contact Oksanich, A.P.; Pritchin, S.E.; Kogdas, M.G.; Kholod, A.G.; Shevchenko, I.V. Article 198001031 357246641
2019 Electrical Characteristics of Au/n-GaN Schottky Junction with a High-k SrTiO3 Insulating Layer Varra, Niteesh Reddy; Vivekananda, D.V.; Sai Krishna, G.; Sri Vivek, B.; Vimala, P. Article 35913935 55913991
2019 Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device Mahi, K.; Messani, B.; Aït-Kaci, H. Article 120331 240674
2020 Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters Bey, A. Baghdad; Talbi, A.; Berka, M.; Benamara, M.A.; Ducroquet, F.; Khediri, A.H.; Benamara, Z. Article 72027 30697
2018 Parameter Extraction of Schottky Solar Cell in Wide Temperature Range Using Genetic Algorithms Lakehal, B; Dendouga, A. Article 1272443 2544904