Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/22021
Or use following links to share this resource in social networks: Recommend this item
Title Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential hemt applications
Authors Kumar, Ashish
Vinayak, Seema
Singh, R.
ORCID
Keywords
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22021
Publisher Видавництво СумДУ
License
Citation Kumar, A. Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential hemt applications [Текст] / A. Kumar, S. Vinayak, R. Singh // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 671-675.
Abstract In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 μm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22021
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Afghanistan Afghanistan
1
Australia Australia
1
Canada Canada
3
China China
11
Denmark Denmark
1
Finland Finland
1
France France
2
Germany Germany
208
India India
2623878
Iran Iran
1
Ireland Ireland
1311940
Italy Italy
1
Japan Japan
3
Lithuania Lithuania
1
Netherlands Netherlands
6376
Norway Norway
1
Poland Poland
2
Romania Romania
1
Russia Russia
15
Singapore Singapore
1
Slovakia Slovakia
2
South Korea South Korea
-217394322
Spain Spain
1
Taiwan Taiwan
6776211
Turkey Turkey
17704758
Ukraine Ukraine
361906215
United Kingdom United Kingdom
180970624
United States United States
136626339
Unknown Country Unknown Country
490646995
Vietnam Vietnam
114637

Downloads

Canada Canada
1
China China
14
Germany Germany
209
India India
2623879
Lithuania Lithuania
1
Russia Russia
1
South Korea South Korea
99337692
Turkey Turkey
1
Ukraine Ukraine
723809620
United Kingdom United Kingdom
1
United States United States
-217394318
Unknown Country Unknown Country
263
Vietnam Vietnam
1

Files

File Size Format Downloads
Kumar.pdf 176.44 kB Adobe PDF 608377365

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.