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Title Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
Authors Kumar, Vibhor
Akhtar, J.
Singh, Kulwant
Maan, Anup Singh
ORCID
Keywords Schottky diode
Breakdown voltage
Ion implantation
Type Article
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/30266
Publisher Сумський державний університет
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Citation Vibhor Kumar, J. Akhtar, Kulwant Singh, Anup Singh Maan, J. Nano- Electron. Phys. 4 No 4, 04009 (2012)
Abstract In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature. In this paper, the influence of temperature on breakdown characteristic of Ion Implanted edge terminated Co/n-Si Schottky Diode formed on n-Si epitaxial layer has been investigated by using SILVACO TCAD. It is also reported that not only resistive area present in close proximity to the edges of boron ion implanted Schottky diode are responsible for improvement in breakdown voltage but also the formation of PN junction near the edges, affect the breakdown voltage to a significant amount. The dopant concentration of epitaxial layer is 1 × 1015/cm3. The variation in reverse breakdown characteristics as a junction of temperature in the range of 300-1000 K is presented in this paper. A comparative study of breakdown voltages of Ion Implanted and as-prepared Schottky diode is also presented. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30266
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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