Strong Room-Temperature Photoluminescence of Si-rich and N-rich Silicon-Nitride Films

Komarovy, F.F.; Vlasukova, L.A.; Parkhomenko, I.N.; Milchanin, O.V.; Mudryi, A.V.; Togambayeva, A.K.; Kovalchuk, N.S.

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Title	Strong Room-Temperature Photoluminescence of Si-rich and N-rich Silicon-Nitride Films
Authors	Komarovy, F.F. Vlasukova, L.A. Parkhomenko, I.N. Milchanin, O.V. Mudryi, A.V. Togambayeva, A.K. Kovalchuk, N.S.
ORCID
Keywords	Non-Stoichiometric Silicon Nitride PECVD Thermal Annealing Si Clusters Photoluminescence N-related Defects
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35162
Publisher	Sumy State University
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Citation	Strong Room-Temperature Photoluminescence of Si-rich and N-rich Silicon-Nitride Films [Текст] / F.F. Komarovy, L.A. Vlasukova, I.N. Parkhomenko et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NTF12
Abstract	Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasmaenhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Sirich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has been shown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has been discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35162
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