|Title||Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs|
High resolution X-ray diffraction
|Date of Issue||2013|
|Publisher||Sumy State University|
|Citation||Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs [Текст] / V.V. Kholevchuk, V.P. Kladko, A.V. Kuchuk et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI20|
The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films grown on GaAs(100) substrates was investigate by High Resolution X-Ray Diffraction (HRXRD). The Ge films were deposited onto GaAs using thermal evaporation of Ge in the vacuum. It was shown that pseudomor-phic films with good structural quality can be obtained by this growth technique. We found out that the films have biaxial deformations due to coherent interface and Poisson ratio. The films are elastically com-pressed in the interface and stretched in the perpendicular  direction. The intrinsic deformations of thin Ge films strongly depended on the deposition rate. Their correlations with surface roughness, electri-cal and optical parameters are discussed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35310
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