Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films

Abstract

CuIn1 – xAlxSe2 (CIAS) thin films were grown using flash evaporation method by varying the film thickness from 500 nm to 700 nm. Prepared CIAS thin films were annealed at 573 K for one hour in vacuum. The influence of film’s thickness and the annealing temperature were characterized by the X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive analysis of X-ray (EDAX), Optical transmission measurements, and Hall Effect measurement. As the film thickness increases the crystallinity improves and due to that the optical absorption also improves. The further improvement for different thicknesses of CIAS thin films were observed by annealing. The thicker (700 nm) and annealed CIAS thin film shows the crystallite size of 24.3 nm, energy band gap of 1.19 eV, and resistivity of about 9  102 Ω cm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35321