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Title Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films
Authors Parihar, U.
Padha, N.
Ray, J.R.
Desai, M.S.
Panchal, C.J.
Mehta, P.K.
Cheshko, Iryna Volodymyrivna  
Protsenko, Ivan Yukhymovych  
Keywords Film system
CuInAlSe2
Optical properties
Scanning electron microscopy
Hall Effect
Type Conference Papers
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/35321
Publisher Sumy State University
License
Citation Effect of Film Thickness and Annealing on the Structural and Optical Properties of CuInAlSe2 Thin Films of CuInAlSe2 Thin Films [Текст] / U. Parihar, N. Padha, J.R. Ray et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI29
Abstract CuIn1 – xAlxSe2 (CIAS) thin films were grown using flash evaporation method by varying the film thickness from 500 nm to 700 nm. Prepared CIAS thin films were annealed at 573 K for one hour in vacuum. The influence of film’s thickness and the annealing temperature were characterized by the X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive analysis of X-ray (EDAX), Optical transmission measurements, and Hall Effect measurement. As the film thickness increases the crystallinity improves and due to that the optical absorption also improves. The further improvement for different thicknesses of CIAS thin films were observed by annealing. The thicker (700 nm) and annealed CIAS thin film shows the crystallite size of 24.3 nm, energy band gap of 1.19 eV, and resistivity of about 9  102 Ω cm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35321
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