|Title||MOCVD Growths of the InAs QD Structures for Mid-IR Emissions|
|Date of Issue||2013|
|Publisher||Sumy State University|
|Citation||Xiaohong, Tang MOCVD Growths of the InAs QD Structures for Mid-IR Emissions [Текст] / T. Xiaohong, Y. Zongyou // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP13|
In this research, InAs quantum dot structures for mid-infrared emission were self-assembled on InP
substrate by using metal-organic chemical vapor deposition. To improve the grown quantum dot’s shape,
the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By
changing the composition of the InxGa1 – xAs matrix layer of the InAs / InxGa1 – xAs / InP quantum dot
structure, emission wavelength of the InAs quantum dot structure has been extended to the longest 2.35
m measured at 77 K.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35383
|Appears in Collections:||
Наукові видання (ЕлІТ)
|princon_2013_2_4_15.pdf||284,13 kB||Adobe PDF||595|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.