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Title Hard Si-C-N Chemical Vapor Deposited Films
Authors Porada, O.K.
Kozak, A.O.
Ivashchenko, V.I.
Dub, S.M.
Pohrebniak, Oleksandr Dmytrovych  
ORCID http://orcid.org/0000-0002-9218-6492
Keywords Sі–C–N films
PECVD
hexamethyldisilazane
substrate temperature
nanohardness
Type Conference Papers
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/42711
Publisher Sumy State University
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Citation Hard Si-C-N Chemical Vapor Deposited Films [Текст] / O.K. Porada, A.O. Kozak, V.I. Ivashchenko et al. // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01NTF09.
Abstract Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds.
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China China
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