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Title | Hard Si-C-N Chemical Vapor Deposited Films |
Authors |
Porada, O.K.
Kozak, A.O. Ivashchenko, V.I. Dub, S.M. Pohrebniak, Oleksandr Dmytrovych ![]() |
ORCID |
http://orcid.org/0000-0002-9218-6492 |
Keywords |
Sі–C–N films PECVD hexamethyldisilazane substrate temperature nanohardness |
Type | Conference Papers |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/42711 |
Publisher | Sumy State University |
License | |
Citation | Hard Si-C-N Chemical Vapor Deposited Films [Текст] / O.K. Porada, A.O. Kozak, V.I. Ivashchenko et al. // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01NTF09. |
Abstract |
Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and
C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds. |
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Porada.pdf | 575,66 kB | Adobe PDF | 1957387114 |
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