Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/4369
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Title Selective processes that proceed during formation of aluminum layers near the phase equilibrium in a plasma–condensate system
Authors Perekrestov, Viacheslav Ivanovych
Korniushchenko, Hanna Serhiivna  
Kosminska, Yuliia Oleksandrivna  
ORCID http://orcid.org/0000-0002-2996-1003
http://orcid.org/0000-0002-2175-9206
Keywords plasma-condensate system
phase equilibrium
Type Article
Date of Issue 2008
URI http://essuir.sumdu.edu.ua/handle/123456789/4369
Publisher Technical Physics
License
Citation Perekrestov, V.I. Selective processes that proceed during formation of aluminum layers near the phase equilibrium in a plasma–condensate system [Текст] / V.I. Perekrestov, H.S. Korniushchenko, Y.A. Kosminska // Technical Physics. — 2008. — vol. 53. — No. 10. — pp. 1364-1370
Abstract The mechanisms of pore formation in aluminum condensates produced using a radically new technological approach that is based on self-organized sputtering systems are studied. The main technological parameters of pore formation are found to be determined by the closeness to the phase equilibrium in the plasma–condensate system and by the predominant contribution of structural or field selectivity to atom-by-atom assembling of the condensate. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4369
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