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Title A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor
Authors Kumar, A.
Chaudhry, A.
Kumar, V.
Sharma, V.
Keywords Triple Material Double Gate (TMDG)
Junctionless field effect transistor (JLFET)
Surface Potential
Centre potential
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/49797
Publisher Sumy State University
License
Citation A. Kumar, A. Chaudhry, V. Kumar, V. Sharma, J. Nano- Electron. Phys. 8 No 4(1), 04042 (2016)
Abstract In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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