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Title | Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions |
Authors |
Skryshevsky, V.A.
Kostiukevych, O.M. Lendiel, V.V. Tretyak, O.V. |
ORCID | |
Keywords |
Memristor Titanium oxide Schottky barrier Surface electronic states |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65782 |
Publisher | Sumy State University |
License | |
Citation | Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions [Текст] / V.A. Skryshevsky, O.M. Kostiukevych, V.V. Lendiel, O.V. Tretyak // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01023. - DOI: 10.21272/jnep.9(1).01023. |
Abstract |
In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one
Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on
supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in
titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si
interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area
electronics, compatible with Si CMOS process and can be managed by external illumination. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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