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Title Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode
Authors Nagornov, Yuri S.
Keywords charge carriers
betavoltaic structure
silicon diode
equivalent circuit
betavoltaics effect
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/67447
Publisher Sumy State University
License
Citation Nagornov, Yuri S. Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode [Текст] / Yuri S. Nagornov // Журнал нано- та електронної фізики. – 2018. – Т.10, № 1. – 01027. - DOI: 10.21272/jnep.10(1).01027.
Abstract The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the current source from betavoltaics effect, ideal pn diode, shunt and series resistances, and also barrier capacity with charge on it. The model allows to explain that increasing of charge on the surface silicon pn diode must decrease the effectiveness of energy conversion. As example, we showed that the open circuit voltage is decreased during irradiation time from beta source Ni-63 and it rapidly becomes higher after discharging.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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