Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/68697
Title: Performance of p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells Device
Authors: Yanuar, H.
Lazuardi, U.
Keywords: hydrogenated amorphous silicon
single junction
PECVD
efficiency
Issue Year: 2018
Publisher: Sumy State University
Citation: Photoluminescence Study of ZnO Nanostructures Grown by Hydrothermal Method [Текст] / B.I. Turko, V.B. Kapustianyk, L.R. Toporovska [et al.] // Журнал нано- та електронної фізики. - 2018. - Т. 10, № 2. - 02002. - DOI: 10.21272/jnep.10(2).02002.
Abstract: We have fabricated the p-i-n hydrogenated amorphous silicon (a-Si:H) thin films by glow discharge technique using silane (H2 diluted) at corning 7059 glass substrate (5 * 5 mm2) coated with indium tin oxide (ITO) in a single chamber reactor at plasma excitation frequency 13.56 MHz. The deposition parameter was: temperature depositions at 200 ˚C, pressure at 75-100 mTorr, power 40-50 W, power density 2-2.5 W/m2, doping ratio of 0.25-1 % and deposition rate 4-6 Å/s. The thickness of the p-i-n a-Si:H layers was varied between 530 to 560 nm. The thickness of p-layer was varied between 10 to 40 nm, i-layer and n-layer constant at a thickness of 500 nm and 20 nm. As a back contact, we used aluminum by the sputtering technique and ITO layer will act as the front contact of the cell. The solar cells were I-V characterized under the dark state (without illumination) and AM 1.5 (illumination mW/cm2) by the solar simulator. The device produced in the dark state has shown the presence of a current with a magnitude in the order of 10 − 3 A. The maximum energy conversion efficiency in this study was 4.6 % and fill factor 0.40.
URI: http://essuir.sumdu.edu.ua/handle/123456789/68697
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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