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Title | An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET |
Authors |
Ashraf, A.
Mani, P. |
ORCID | |
Keywords |
SMG SGT SOI MOSFET linear region sub-threshold saturation DIBL |
Type | Article |
Date of Issue | 2018 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/70907 |
Publisher | Sumy State University |
License | |
Citation | Ashraf, A. An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [Текст] / A. Ashraf, P. Mani // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04012. - DOI: 10.21272/jnep.10(4).04012. |
Abstract |
In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of device operation. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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