An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET

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Title	An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET
Authors	Ashraf, A. Mani, P.
ORCID
Keywords	SMG SGT SOI MOSFET linear region sub-threshold saturation DIBL
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/70907
Publisher	Sumy State University
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Citation	Ashraf, A. An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [Текст] / A. Ashraf, P. Mani // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04012. - DOI: 10.21272/jnep.10(4).04012.
Abstract	In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of device operation.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)